Low-Temperature Growth of Well-Aligned β-Ga2O3 Nanowires from a Single-Source Organometallic Precursor

✍ Scribed by K.-W. Chang; J.-J. Wu

• Publisher: John Wiley and Sons
• Year: 2004
• Tongue: English
• Weight: 413 KB
• Volume: 16
• Category: Article
• ISSN: 0935-9648
• DOI: 10.1002/adma.200306299

✦ Synopsis

The growth of well‐aligned Ga~2~O~3~ nanowires at low temperature (550 °C) is reported (see Figure). A single‐source precursor of gallium acetylacetonate is employed as the reactant for the growth of the nanowires by a vapor–liquid–solid route. Structural characterization by X‐ray diffraction and transmission electron microscopy reveals that the nanowires are preferentially oriented in the (2?01) direction.