Low-Temperature Growth of Well-Aligned β
✍
K.-W. Chang; J.-J. Wu
📂
Article
📅
2004
🏛
John Wiley and Sons
🌐
English
⚖ 413 KB
👁 1 views
**The growth of well‐aligned Ga**~**2**~**O**~**3**~ **nanowires at low temperature** (550 °C) is reported (see Figure). A single‐source precursor of gallium acetylacetonate is employed as the reactant for the growth of the nanowires by a vapor–liquid–solid route. Structural characterization by X‐ra