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Catalytic Growth of β-Ga2O3 Nanowires by Arc Discharge

✍ Scribed by Y. C. Choi; W. S. Kim; Y. S. Park; S. M. Lee; D. J. Bae; Y. H. Lee; G.-S. Park; W. B. Choi; N. S. Lee; J. M. Kim

Publisher
John Wiley and Sons
Year
2000
Tongue
English
Weight
367 KB
Volume
12
Category
Article
ISSN
0935-9648

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✍ K.-W. Chang; J.-J. Wu 📂 Article 📅 2004 🏛 John Wiley and Sons 🌐 English ⚖ 413 KB 👁 1 views

**The growth of well‐aligned Ga**~**2**~**O**~**3**~ **nanowires at low temperature** (550 °C) is reported (see Figure). A single‐source precursor of gallium acetylacetonate is employed as the reactant for the growth of the nanowires by a vapor–liquid–solid route. Structural characterization by X‐ra