Growth mechanisms and thermal stability of ion-beam-induced epitaxial Pd2Si films
β Scribed by Hiroshi Ishiwara
- Publisher
- Elsevier Science
- Year
- 1982
- Tongue
- English
- Weight
- 351 KB
- Volume
- 92
- Category
- Article
- ISSN
- 0040-6090
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TiAlN films prepared using ion beam sputter deposition (IBSD) method are planed to be used as both the bottom electrode and diffusion barrier for a metal-insulator-metal (MIM) (Ba,Sr)TiO 3 (BST) capacitor in our study. We had shown the effects of ion beam voltage, substrate temperature on electrical