✦ LIBER ✦
Identification of induced reaction during XPS depth profile measurements of CeO2Si films grown by ion beam epitaxy
✍ Scribed by Z Wu; D Huang; X Yang; J Wang; F Qin; J Zhang; Z Yang
- Publisher
- Elsevier Science
- Year
- 1998
- Tongue
- English
- Weight
- 477 KB
- Volume
- 49
- Category
- Article
- ISSN
- 0042-207X
No coin nor oath required. For personal study only.
✦ Synopsis
An anomalous behavior was observed in X-ray photoelectron Spectroscopy (XPS) depth profile measurements conducted on CeO/Si epilayers grown by ion beam epitaxy (IBE) : the signals of Ce3+ and Ce4+ co-exist, and the ratio between them increases during the etching time and then tends to maintain a constant level before increasing again. The results of X-ray Diffraction (XRD), Auger Electron Spectroscopy (AES), and Rutherford Back-Scattering
(RBS) measurements proved that the reduction chemical reaction of CeO, is induced by ion-etching.