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Growth mechanism and defects in SiC prepared by sublimation method

✍ Scribed by Shigehiro Nishino; Tomohiko Higashino; Tomoyuki Tanaka; Junji Saraie

Book ID
103171043
Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
398 KB
Volume
147
Category
Article
ISSN
0022-0248

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✍ Dr. E. N. Mokhov; Dr. I. L. Shulpina; A. S. Tregubova; Dr. Yu. A. Vodakov πŸ“‚ Article πŸ“… 1981 πŸ› John Wiley and Sons 🌐 English βš– 705 KB

## Abstract Structural defects of α‐SiC epitaxial layers grown by sublimation β€œsandwich‐method” in vacuum at the temperatures ranging from 1600 to 2100 Β°C have been investigated by X‐ray topography and optical microscopy methods. It was shown, that perfect SiC layers with the homogeneous polytype s