Comparative study of growth kinetics of the Al x Ga 1Γ x N (xΒΌ0-1) layers grown by plasma-assisted molecular beam epitaxy (PA MBE) under different growth conditions (group III to activated nitrogen and Al to Ga flux ratios) is presented. The strong influence of elastic stress on the surface morpholo
β¦ LIBER β¦
Growth kinetics of AlGaN films by plasma-assisted molecular-beam epitaxy
β Scribed by Iliopoulos, E.; Moustakas, T. D.
- Book ID
- 125479138
- Publisher
- American Institute of Physics
- Year
- 2002
- Tongue
- English
- Weight
- 326 KB
- Volume
- 81
- Category
- Article
- ISSN
- 0003-6951
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