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Growth kinetics of N-face polarity GaN by plasma-assisted molecular-beam epitaxy

✍ Scribed by Monroy, E.; Sarigiannidou, E.; Fossard, F.; Gogneau, N.; Bellet-Amalric, E.; Rouvière, J.-L.; Monnoye, S.; Mank, H.; Daudin, B.


Book ID
121016658
Publisher
American Institute of Physics
Year
2004
Tongue
English
Weight
556 KB
Volume
84
Category
Article
ISSN
0003-6951

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InGaN/GaN multiple quantum-wells (MQWs) on Ga-polarity GaN by plasma-assisted molecularbeam epitaxy were grown and characterized. In-situ reflection high-energy-electron diffraction observations and high-resolution X-ray diffraction results indicated that a flat interface and a good periodicity of t