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Plasma assisted molecular beam epitaxy of GaN with growth rates >2.6µm/h

✍ Scribed by McSkimming, Brian M.; Wu, F.; Huault, Thomas; Chaix, Catherine; Speck, James S.

Book ID: 121321328
Publisher: Elsevier Science
Year: 2014
Tongue: English
Weight: 697 KB
Volume: 386
Category: Article
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2013.10.013

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