Growth by selective area epitaxy on patterned substrates and characterization of GaInAs/InP nanostructures

✍ Scribed by A.P. Roth; P. Finnie; S. Charbonneau; C. Lacelle; C. Guerini; J. Fraser; M. Buchanan; Y. Feng

• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 271 KB
• Volume: 28
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/s0026-2692(96)00130-9

✦ Synopsis

GalnAs/InP multilayer structures have been grown by chemical beam epitaxy in windows opened in SiO2 masks deposited on (I)01) InP substrates. The windows were narrow lines of width varying between 20 and 2pro, oriented along the [01 !] direction. The growth conditions, substratc temperature and V/Ill ratio wcrc adjusted to minimize the growth on the masked areas and to create (111) fleets along the mesa. The samples wcrc studied using a field emission scanning electron microscope and by low temperature photoluminescence. The diffusion of In and Ga species from the (111) planes towards (100) observed for the growth oflnP and GalnAs enhances the growth rate on the (100) plane and chartges the composition of the ternary layer. This gives rise to a red shift of the photoluminescence spectra from the GalnAs layers that depends on the initial width of the line. This diffusion can be used to dcsign