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Characterization of the crystallographic defect structure in selected-area epitaxial growth of GaInAs on InP by metallo-organic chemical vapour deposition

✍ Scribed by R.E. Mallard; E.J. Thrush; M.A. Gibbon; G.R. Booker


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
849 KB
Volume
20
Category
Article
ISSN
0921-5107

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