Thick films of InxGa~\_xAs (x = 0.53 +\_0.04) have been grown on misoriented silicon substrates by molecular beam epitaxy as a function of substrate temperature and layer thickness. For films of 3 pm thickness, grown in the temperature range Tg = 200 to 550°C, the films became increasingly rough as
✦ LIBER ✦
Growth by molecular beam epitaxy of thick films of InxGa1-xAs (x ∼ 0.53) on Si(100) substrates
✍ Scribed by D.I. Westwood; D.A. Woolf; S.A. Clark
- Book ID
- 107790632
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 399 KB
- Volume
- 114
- Category
- Article
- ISSN
- 0022-0248
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