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Growth behavior of highly oriented Si films on fused quartz by photo-CVD

โœ Scribed by Masanori Okuyama; Noriaki Fujiki; Yoshiki Nakatani; Kohji Inoue; Yoshihiro Hamakawa

Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
394 KB
Volume
41-42
Category
Article
ISSN
0169-4332

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The epitaxial growth of cubic-silicon carbide SiC on Si substrates was carried out by triode plasma CVD using ลฝ . dimethylsilane DMS as source gas. The lowering of electron temperature and the reduction of the rf fluctuation of plasma space potential in the afterglow plasma region were realized by a