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Growth and transport properties of complementary germanium nanowire field-effect transistors

โœ Scribed by Greytak, Andrew B.; Lauhon, Lincoln J.; Gudiksen, Mark S.; Lieber, Charles M.


Book ID
121447229
Publisher
American Institute of Physics
Year
2004
Tongue
English
Weight
464 KB
Volume
84
Category
Article
ISSN
0003-6951

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โœ Kyeong-Ju Moon; Ji-Hyuk Choi; Tae-Il Lee; Moon-Ho Ham; Wan-Joo Maeng; Inchan Hwa ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 616 KB

We report the electrical transport of the Si nanowires in a field-effect transistor (FET) configuration, which were synthesized from B-doped p-type Si(1 1 1) wafer by an aqueous electroless etching method based on the galvanic displacement of Si by the reduction of Ag + ions on the wafer surface. Th