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Transport Properties in (Ga,Mn)N Nanowire Field-Effect Transistors

โœ Scribed by Ham, M.-H.; Oh, D.-K.; Myoung, J.-M.


Book ID
125902036
Publisher
American Chemical Society
Year
2007
Tongue
English
Weight
234 KB
Volume
111
Category
Article
ISSN
1932-7447

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Electrical transport properties in elect
โœ Kyeong-Ju Moon; Ji-Hyuk Choi; Tae-Il Lee; Moon-Ho Ham; Wan-Joo Maeng; Inchan Hwa ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 616 KB

We report the electrical transport of the Si nanowires in a field-effect transistor (FET) configuration, which were synthesized from B-doped p-type Si(1 1 1) wafer by an aqueous electroless etching method based on the galvanic displacement of Si by the reduction of Ag + ions on the wafer surface. Th