✦ LIBER ✦

Gate-Stack Engineering in $n$-Type Ultrascaled Si Nanowire Field-Effect Transistors

✍ Scribed by Luisier, Mathieu; Schenk, Olaf

Book ID: 120970025
Publisher: IEEE
Year: 2013
Tongue: English
Weight: 394 KB
Volume: 60
Category: Article
ISSN: 0018-9383
DOI: 10.1109/TED.2013.2278573

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Evidence for giant piezoresistance effec

Evidence for giant piezoresistance effect in n-type silicon nanowire field-effect transistors

✍ Kang, Ting-Kuo 📂 Article 📅 2012 🏛 American Institute of Physics 🌐 English ⚖ 559 KB

Electron mobility enhancement in straine

Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors

✍ Welser, J.; Hoyt, J.L.; Gibbons, J.F. 📂 Article 📅 1994 🏛 IEEE 🌐 English ⚖ 311 KB

A compact analytical current conduction

A compact analytical current conduction model for a depletion-mode n-type nanowire field-effect transistor with a bottom-gate structure

✍ Yu, Yun Seop; Lee, Se Han; Oh, Jung Hyun; Kim, Han Jung; Hwang, Sung Woo; Ahn, D 📂 Article 📅 2008 🏛 Institute of Physics 🌐 English ⚖ 573 KB

Evaluation of a Gate Capacitance in the

Evaluation of a Gate Capacitance in the Sub-aF Range for a Chemical Field-Effect Transistor With a Si Nanowire Channel

✍ Clément, N.; Nishiguchi, K.; Fujiwara, A.; Vuillaume, D. 📂 Article 📅 2011 🏛 IEEE 🌐 English ⚖ 940 KB

Superior suppression of gate current lea

Superior suppression of gate current leakage in Al2O3/Si3N4bilayer-based AlGaN/GaN insulated gate heterostructure field-effect transistors

✍ C. X. Wang; N. Maeda; M. Hiroki; T. Tawara; T. Makimoto; T. Kobayahsi; T. Enoki 📂 Article 📅 2005 🏛 Springer US 🌐 English ⚖ 123 KB

Dopant distribution in gate electrode of

Dopant distribution in gate electrode of n- and p-type metal-oxide-semiconductor field effect transistor by laser-assisted atom probe

✍ Inoue, K.; Yano, F.; Nishida, A.; Takamizawa, H.; Tsunomura, T.; Nagai, Y.; Hase 📂 Article 📅 2009 🏛 American Institute of Physics 🌐 English ⚖ 769 KB