Dopant distribution in gate electrode of n- and p-type metal-oxide-semiconductor field effect transistor by laser-assisted atom probe

✍ Scribed by Inoue, K.; Yano, F.; Nishida, A.; Takamizawa, H.; Tsunomura, T.; Nagai, Y.; Hasegawa, M.

• Book ID: 118066079
• Publisher: American Institute of Physics
• Year: 2009
• Tongue: English
• Weight: 769 KB
• Volume: 95
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.3186788