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Evaluation of a Gate Capacitance in the Sub-aF Range for a Chemical Field-Effect Transistor With a Si Nanowire Channel

✍ Scribed by Clément, N.; Nishiguchi, K.; Fujiwara, A.; Vuillaume, D.


Book ID
111697216
Publisher
IEEE
Year
2011
Tongue
English
Weight
940 KB
Volume
10
Category
Article
ISSN
1536-125X

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