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Electrical transport properties in electroless-etched Si nanowire field-effect transistors

โœ Scribed by Kyeong-Ju Moon; Ji-Hyuk Choi; Tae-Il Lee; Moon-Ho Ham; Wan-Joo Maeng; Inchan Hwang; Hyungjun Kim; Jae-Min Myoung

Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
616 KB
Volume
87
Category
Article
ISSN
0167-9317

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โœฆ Synopsis

We report the electrical transport of the Si nanowires in a field-effect transistor (FET) configuration, which were synthesized from B-doped p-type Si(1 1 1) wafer by an aqueous electroless etching method based on the galvanic displacement of Si by the reduction of Ag + ions on the wafer surface. The FET performance of the as-synthesized Si nanowires was investigated and compared with Ag-nanoparticles-removed Si nanowires. In addition, high-k HfO 2 gate dielectric was applied to the Si nanowires FETs, leading to the enhanced performance such as higher drain current and lower subthreshold swing.

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