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Germanium Nanowire Metal–Oxide–Semiconductor Field-Effect Transistor Fabricated by Complementary-Metal–Oxide–Semiconductor-Compatible Process

✍ Scribed by Peng, J.W.; Singh, N.; Lo, G.Q.; Bosman, M.; Ng, C.M.; Lee, S.J.

Book ID: 114620254
Publisher: IEEE
Year: 2011
Tongue: English
Weight: 444 KB
Volume: 58
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2010.2088125

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