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Scaling Properties of – Core–Shell Nanowire Field-Effect Transistors

✍ Scribed by Junghyo Nah; En-Shao Liu; Varahramyan, K.M.; Shahrjerdi, D.; Banerjee, S.K.; Tutuc, E.

Book ID
114619894
Publisher
IEEE
Year
2010
Tongue
English
Weight
566 KB
Volume
57
Category
Article
ISSN
0018-9383

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We report the electrical transport of the Si nanowires in a field-effect transistor (FET) configuration, which were synthesized from B-doped p-type Si(1 1 1) wafer by an aqueous electroless etching method based on the galvanic displacement of Si by the reduction of Ag + ions on the wafer surface. Th