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Efficient simulation of silicon nanowire field effect transistors and their scaling behavior

✍ Scribed by Shin, Mincheol

Book ID: 115509952
Publisher: American Institute of Physics
Year: 2007
Tongue: English
Weight: 719 KB
Volume: 101
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.2430786

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