Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55 μm quantum dot laser
✍ Scribed by C. Paranthoen; C. Platz; G. Moreau; N. Bertru; O. Dehaese; A. Le Corre; P. Miska; J. Even; H. Folliot; C. Labbé; G. Patriarche; J.C. Simon; S. Loualiche
- Book ID
- 118532143
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 430 KB
- Volume
- 251
- Category
- Article
- ISSN
- 0022-0248
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
We report on round quantum dots grown on InP (100) substrate, which emit around 1.55 mm. At 10 K the full width at half maximum is as small as 28 meV, attesting a rather uniform size distribution. The carrier lifetimes are almost the same across the whole photoluminescence band, indicating the good
We report the results of spatially resolved micro-photoluminescence on self-organized InAs/GaAs quantum dots. Our results suggest that carrier thermal redistribution is linked to the effects of carrier migration in these quantum dots. The higher migration length was observed at 150 K, making the hig