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Continuous wavelength tuning of InAs quantum dots on InP (1 0 0) and (3 1 1)A substrates by chemical-beam epitaxy

✍ Scribed by Q Gong; R Nötzel; P.J van Veldhoven; J.H Wolter


Book ID
108240702
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
423 KB
Volume
23
Category
Article
ISSN
1386-9477

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ErP has been grown on InP (0 0 1), (1 1 1)A and (1 1 1)B substrates by low-pressure organometallic vapor-phase epitaxy. The morphological change with growth temperature has been explored by atomic force microscope. On all the substrates, ErP is grown in island structure. Height and area size of the