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Growth and fabrication of AlGaN-based ultraviolet light emitting diodes on 6H-SiC(0 0 0 1) substrates and the effect of carrier-blocking layers on their emission characteristics

✍ Scribed by Ji-Soo Park; Zachary J. Reitmeier; Daryl Fothergill; Xiyao Zhang; John F. Muth; Robert F. Davis


Book ID
108215287
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
750 KB
Volume
127
Category
Article
ISSN
0921-5107

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Growth and fabrication of AlGaN/GaN HEMT
✍ Weijun Luo; Xiaoliang Wang; Hongling Xiao; Cuimei Wang; Junxue Ran; Lunchun Guo; πŸ“‚ Article πŸ“… 2008 πŸ› Elsevier Science 🌐 English βš– 262 KB

AlGaN/GaN high electron mobility transistor (HEMT) hetero-structures were grown on the 2-in Si (1 1 1) substrate using metalorganic chemical vapor deposition (MOCVD). Low-temperature (LT) AlN layers were inserted to relieve the tension stress during the growth of GaN epilayers. The grown AlGaN/GaN H