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Growth and characterization of SiON thin films by using thermal-CVD machine

โœ Scribed by R.K. Pandey; L.S. Patil; J.P. Bange; D.R. Patil; A.M. Mahajan; D.S. Patil; D.K. Gautam


Book ID
108233801
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
332 KB
Volume
25
Category
Article
ISSN
0925-3467

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โœ Hirose, Yoichi; Terasawa, Yuki ๐Ÿ“‚ Article ๐Ÿ“… 1986 ๐Ÿ› Institute of Pure and Applied Physics ๐ŸŒ English โš– 538 KB

Diamond thin films have been formed by thermal chemical vapor deposition (thermal CVD) using the organic compounds such as CH3OH, C2H5OH, CH3COCH3 C2H5OC2H5, and (CH3)3N. The films are grown on the silicon substrates with high growth rate (8โ€“10 ยตm/h) under the pressure ranging 1โ€“800 Torr. This growt