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Gettering of implanted Au in MeV?C implanted Si

✍ Scribed by S. Mohapatra; B. Joseph; B. Satpati; D.P. Mahapatras


Publisher
Springer
Year
2005
Tongue
English
Weight
483 KB
Volume
82
Category
Article
ISSN
1432-0630

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One hour 500 Β°C air annealing induced movement of implanted Au in Si have been studied for 32 keV Au implantation in Si, in the fluence range of 1 Γ‚ 10 15 -1 Γ‚ 10 17 ions cm Γ€2 . Samples were characterized using Rutherford backscattering spectrometry and cross-sectional transmission electron microsc