RBS/channeling study of buried Ge quantu
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A. Fonseca; E. Alves; N.P. Barradas; J.P. LeitΓ£o; N.A. Sobolev; M.C. Carmo; A.I.
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Article
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2006
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Elsevier Science
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English
β 679 KB
In last decades we have been assisting to a crescent importance of low dimensional systems for the fabrication of nano-and optoelectronic devices. Ge quantum dots (QDs) are well suited for fulfilling these requirements. In this work we present and discuss Ge/Si multilayer and single layer samples gr