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Midinfrared photoresponse of Ge quantum dots on a strained Si 0.65 Ge 0.35 layer

โœ Scribed by Yakimov, A I; Nikiforov, A I; Timofeev, V A; Bloshkin, A A; Kirienko, V V; Dvurechenskii, A V

Book ID
120502610
Publisher
Institute of Physics
Year
2011
Tongue
English
Weight
512 KB
Volume
26
Category
Article
ISSN
0268-1242

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Wetting layer formation in superlattices
Wetting layer formation in superlattices with Ge quantum dots on Si(1 0 0)
โœ A.I. Nikiforov; V.V. Ulyanov; V.A. Timofeev; O.P. Pchelyakov ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 190 KB

The influence of parameters of germanium deposition on wetting layer thickness was studied during the growth on the Si(1 0 0) surface. A non-monotone dependence of the thickness on growth temperature was discovered and accounted for by changing the mechanism of the layer-by-layer growth. The conclus