This paper reports on quantitative measurements of strain in a 7.5 nm compressive strained Ge/5.1 nm tensile strained Si bi-layer grown by reduced pressure chemical vapour deposition on top of a relaxed Si 0.5 Ge 0.5 virtual substrate. Geometric phase analysis of high resolution transmission electro
β¦ LIBER β¦
Characterisation of Si/Ge0.5Si0.5 Strained-Layer Superlattices on SIMOX Substrates
β Scribed by Lin, Chenglu ;Hemment, P. L. F. ;Chan, C. W. M. ;Li, Jinhua ;Zhu, Wenhua ;Ni, Rushan ;Zhou, Guoliang ;Zou, Shichang
- Publisher
- John Wiley and Sons
- Year
- 1992
- Tongue
- English
- Weight
- 373 KB
- Volume
- 132
- Category
- Article
- ISSN
- 0031-8965
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