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Influence of antimony on the morphology and properties of an array of Ge/Si(100) quantum dots

โœ Scribed by G. E. Cirlin; A. A. Tonkikh; V. E. Ptitsyn; V. G. Dubrovskii; S. A. Masalov; V. P. Evtikhiev; D. V. Denisov; V. M. Ustinov; P. Werner


Book ID
110140949
Publisher
SP MAIK Nauka/Interperiodica
Year
2005
Tongue
English
Weight
156 KB
Volume
47
Category
Article
ISSN
1063-7834

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We present the heterogeneous growth of InAs quantum dots (QDs) on Si platform using GaAs/Ge/ Si 1 ร€ x Ge x /Si substrate. Self-assembled InAs QDs were grown on GaAs/Ge/Si 1 ร€ x Ge x /Si substrate by employing molecular beam epitaxy (MBE). The areal density, width and height of QDs were characterized