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Impact ionization of excitons in Ge/Si structures with Ge quantum dots grown on the oxidized Si(100) surfaces

✍ Scribed by Shklyaev, A. A.; Shegai, O. A.; Nakamura, Y.; Ichikawa, M.

Book ID: 127330251
Publisher: American Institute of Physics
Year: 2014
Tongue: English
Weight: 1015 KB
Volume: 115
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.4875101

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