RBS/channeling study of buried Ge quantum dots grown in a Si layer

✍ Scribed by A. Fonseca; E. Alves; N.P. Barradas; J.P. Leitão; N.A. Sobolev; M.C. Carmo; A.I. Nikiforov; H. Presting

• Book ID: 103861156
• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 679 KB
• Volume: 249
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/j.nimb.2006.03.032

✦ Synopsis

In last decades we have been assisting to a crescent importance of low dimensional systems for the fabrication of nano-and optoelectronic devices. Ge quantum dots (QDs) are well suited for fulfilling these requirements. In this work we present and discuss Ge/Si multilayer and single layer samples grown by molecular beam epitaxy. RBS/channeling results reveal the evidence for the presence of Ge QD for the thickest (with 1 ML of SiO 2 and 0.9 nm of Ge) single layer sample. On the other hand Ge atoms are fully substitutional incorporated in the Si matrix for the thinner sample, excluding the formation of Ge QDs. Multilayer sample shows an angular deviation of the Ge curve (À0.48°) with respect to the Si ones, indicating the compressive strain of the films. A tetragonal distortion of (1.78 ± 0.19%) was calculated.