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Ge/Si nanowire heterostructures as high-performance field-effect transistors

โœ Scribed by Xiang, Jie; Lu, Wei; Hu, Yongjie; Wu, Yue; Yan, Hao; Lieber, Charles M.

Book ID
109895881
Publisher
Nature Publishing Group
Year
2006
Tongue
English
Weight
366 KB
Volume
441
Category
Article
ISSN
0028-0836

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โœ Cui, Yi; Zhong, Zhaohui; Wang, Deli; Wang, Wayne U.; Lieber, Charles M. ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› American Chemical Society ๐ŸŒ English โš– 156 KB

Silicon nanowires can be prepared with single-crystal structures, diameters as small as several nanometers and controllable hole and electron doping, and thus represent powerful building blocks for nanoelectronics devices such as field effect transistors. To explore the potential limits of silicon n