✦ LIBER ✦

High-performance heterostructure field-effect transistors (HFETs) with step-modulationed InGaAs channel structure

✍ Scribed by Wen-Chau Liu; Lih-Wen Laih; Wen-Lung Chang; Shiou-Ying Cheng

Book ID: 114194584
Publisher: Elsevier Science
Year: 1998
Tongue: English
Weight: 404 KB
Volume: 52
Category: Article
ISSN: 0254-0584
DOI: 10.1016/s0254-0584(98)80012-6

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

On the low-medium-high step-modulation-d

On the low-medium-high step-modulation-doped-channel (LMH-SMDC) heterostructure field-effect transistor

✍ Yung-Hsin Shie; Wen-Lung Chang; Hsi-Jen Pan; Shiou-Ying Cheng; Wen-Shiung Lour; 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 264 KB

Investigation of InGaP/InGaAs n- and p-c

Investigation of InGaP/InGaAs n- and p-channel pseudomorphic modulation-doped field effect transistors with high gate turn-on voltages

✍ Jung-Hui Tsai; Tzu-Yen Weng; King-Poul Zhu 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 657 KB

Analytical performance evaluation of AlG

Analytical performance evaluation of AlGaN/GaN metal insulator semiconductor heterostructure field effect transistor and its comparison with conventional HFETs for high power microwave applications

✍ Ruchika Aggarwal; Anju Agrawal; Mridula Gupta; R. S. Gupta 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 475 KB

## Abstract In this work, a comprehensive analytical model for AlGaN/GaN MISHFET has been presented to evaluate the drain current characteristics, transconductance, and cut‐off frequency of the insulated device. The model takes into account polynomial dependence of sheet carrier density on position

Nondestructive evaluation of channel car

Nondestructive evaluation of channel carrier concentration in modulation-doped InAlAs/InGaAs field-effect transistor structures by room-temperature photoluminescence

✍ Watanabe, Kazuo; Yokoyama, Haruki 📂 Article 📅 1999 🏛 American Institute of Physics 🌐 English ⚖ 362 KB

InP-based heterostructure field-effect t

InP-based heterostructure field-effect transistors with high-quality short-period (InAs)3m/(GaAs)1m superlattice channel layers

✍ U. Auer; R. Reuter; C. Heedt; W. Prost; F.J. Tegude 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 369 KB

High-Performance Double-Channel Poly-Sil

High-Performance Double-Channel Poly-Silicon Thin-Film Transistor With Raised Drain and Reduced Drain Electric Field Structures

✍ Feng-Tso Chien; Chien-Nan Liao; Chin-Mu Fang; Yao-Tsung Tsai 📂 Article 📅 2009 🏛 IEEE 🌐 English ⚖ 973 KB