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Nondestructive evaluation of channel carrier concentration in modulation-doped InAlAs/InGaAs field-effect transistor structures by room-temperature photoluminescence

✍ Scribed by Watanabe, Kazuo; Yokoyama, Haruki

Book ID: 115482589
Publisher: American Institute of Physics
Year: 1999
Tongue: English
Weight: 362 KB
Volume: 86
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.371366

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