Phonon‐electron interactions in the two‐dimensional electron gas in InGaAs‐InAlAs modulation‐doped field‐effect transistor structures studied by Raman scattering

✍ Scribed by Maslar, J. E.; Dorsten, J. F.; Bohn, P. W.; Agarwala, S.; Adesida, I.; Caneau, C.; Bhat, R.

• Book ID: 115467902
• Publisher: American Institute of Physics
• Year: 1993
• Tongue: English
• Weight: 658 KB
• Volume: 63
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.110645