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High performance ring oscillators from 10-nm wide silicon nanowire field-effect transistors

โœ Scribed by Ruo-Gu Huang; Douglas Tham; Dunwei Wang; James R. Heath


Book ID
107642832
Publisher
Tsinghua Press
Year
2011
Tongue
English
Weight
641 KB
Volume
4
Category
Article
ISSN
1998-0124

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High Performance Silicon Nanowire Field
โœ Cui, Yi; Zhong, Zhaohui; Wang, Deli; Wang, Wayne U.; Lieber, Charles M. ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› American Chemical Society ๐ŸŒ English โš– 156 KB

Silicon nanowires can be prepared with single-crystal structures, diameters as small as several nanometers and controllable hole and electron doping, and thus represent powerful building blocks for nanoelectronics devices such as field effect transistors. To explore the potential limits of silicon n