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Germanium MOSFETs With CeO2/HfO2/ TiN Gate Stacks

✍ Scribed by Nicholas, G.; Brunco, D.P.; Dimoulas, A.; Van Steenbergen, J.; Bellenger, F.; Houssa, M.; Caymax, M.; Meuris, M.; Panayiotatos, Y.; Sotiropoulos, A.

Book ID
114618739
Publisher
IEEE
Year
2007
Tongue
English
Weight
380 KB
Volume
54
Category
Article
ISSN
0018-9383

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Investigation of atomic vapour deposited
Investigation of atomic vapour deposited TiN/HfO2/SiO2 gate stacks for MOSFET devices
✍ Ch. Wenger; M. Lukosius; I. Costina; R. Sorge; J. Dabrowski; H.-J. MΓΌssig; S. Pa πŸ“‚ Article πŸ“… 2008 πŸ› Elsevier Science 🌐 English βš– 353 KB

HfO 2 films were grown by atomic vapour deposition (AVD) on SiO 2 /Si (1 0 0) substrates. The positive shift of the flat band voltage of the HfO 2 based metal-oxide-silicon (MOS) devices indicates the presence of negative fixed charges with a density of 5 Γ‚ 10 12 cm Γ€2 . The interface trap charge de