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Charge trapping in SiO2/HfO2/TiN gate stack

✍ Scribed by F Lime; G Ghibaudo; B. Guillaumot


Book ID
108361998
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
496 KB
Volume
43
Category
Article
ISSN
0026-2714

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HfO 2 films were grown by atomic vapour deposition (AVD) on SiO 2 /Si (1 0 0) substrates. The positive shift of the flat band voltage of the HfO 2 based metal-oxide-silicon (MOS) devices indicates the presence of negative fixed charges with a density of 5 Γ‚ 10 12 cm Γ€2 . The interface trap charge de