Charge carrier generation/trapping mechanisms in HfO2/SiO2 stack
โ Scribed by Piyas Samanta; Chunxiang Zhu; Mansun Chan
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 366 KB
- Volume
- 84
- Category
- Article
- ISSN
- 0167-9317
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We have investigated electrical stress-induced positive charge buildup in a hafnium aluminate (HfAlO)/ silicon dioxide (SiO 2 ) dielectric stack (equivalent oxide thickness = 2.63 nm) in metal-oxide-semiconductor (MOS) capacitor structures with negative bias on the TaN gate. Various mechanisms of po
In this paper, we present our results on the distribution and generation of traps in a SiO 2 /Al 2 O 3 transistor. The investigation has been carried out by using charge pumping measurements, both variable voltage and frequency techniques, and constant voltage stress. By increasing the amplitude of