𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Mechanism of positive charge generation in the bulk of HfAlO/SiO2 stack

✍ Scribed by Piyas Samanta; Chin-Lung Cheng; Yao-Jen Lee; Mansun Chan

Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
559 KB
Volume
86
Category
Article
ISSN
0167-9317

No coin nor oath required. For personal study only.

✦ Synopsis

We have investigated electrical stress-induced positive charge buildup in a hafnium aluminate (HfAlO)/ silicon dioxide (SiO 2 ) dielectric stack (equivalent oxide thickness = 2.63 nm) in metal-oxide-semiconductor (MOS) capacitor structures with negative bias on the TaN gate. Various mechanisms of positive charge generation in the dielectric have been theoretically studied. Although, anode hole injection (AHI) and valence band hole tunneling are energetically favorable in the stress voltage range studied, the measurement results can be best explained by the dispersive proton transport model.

📜 SIMILAR VOLUMES

Profiling of traps in SiO2/Al2O3 gate st
Profiling of traps in SiO2/Al2O3 gate stack by the charge pumping technique
✍ Isodiana Crupi; Robin Degraeve; Bogdan Govoreanu; David P. Brunco; Philippe Rous 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 132 KB

In this paper, we present our results on the distribution and generation of traps in a SiO 2 /Al 2 O 3 transistor. The investigation has been carried out by using charge pumping measurements, both variable voltage and frequency techniques, and constant voltage stress. By increasing the amplitude of

The Mechanism of Charge Generation in Ch
The Mechanism of Charge Generation in Charge-Generation Units Composed of p-Doped Hole-Transporting Layer/HATCN/n-Doped Electron-Transporting Layers
✍ Sunghun Lee; Jeong-Hwan Lee; Jae-Hyun Lee; Jang-Joo Kim 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 747 KB

## Abstract The rate‐limiting step of charge generation in charge‐generation units (CGUs) composed of a p‐doped hole‐transporting layer (p‐HTL), 1,4,5,8,9,11‐hexaazatriphenylene hexacarbonitrile (HATCN) and n‐doped electron‐transporting layer (n‐ETL), where 1,1‐bis‐(4‐bis(4‐methyl‐phenyl)‐amino‐phe