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Current transport mechanisms in (HfO2)x(SiO2) 1−x/SiO2gate stacks

✍ Scribed by I.Z. Mitrovic; Y. Lu; O. Buiu; S. Hall

Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
339 KB
Volume
84
Category
Article
ISSN
0167-9317

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✍ M Houssa; V.V Afanas’ev; A Stesmans; M.M Heyns 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 122 KB

The generation of defects in ultra-thin SiO gate layers and SiO / ZrO gate stacks is studied through the time-dependent 2 2 2 current density variation DJ (t) 5 J (t) 2 J (0) observed during constant gate voltage stress of MOS capacitors. The time G G G dependence of the defect density variation DN