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Modeling of remote Coulomb scattering limited mobility in MOSFET with HfO2/SiO2 gate stacks

✍ Scribed by S. Barraud; L. Thevenod; M. Cassé; O. Bonno; M. Mouis


Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
379 KB
Volume
84
Category
Article
ISSN
0167-9317

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