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Generation of vacancy cluster-related defects during single MeV silicon ion implantation of silicon

✍ Scribed by Pastuović, Ž.; Capan, I.; Siegele, R.; Jačimović, R.; Forneris, J.; Cohen, D.D.; Vittone, E.

Book ID
122262986
Publisher
Elsevier Science
Year
2014
Tongue
English
Weight
908 KB
Volume
332
Category
Article
ISSN
0168-583X

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✍ M.D.H. Lay; J.C. McCallum; C. Jagadish 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 205 KB

The effect of implantation angle on the profile of the vacancy-phosphorus and divacancy centres (VP/V 2 À ) in n-type 0.7-1.1 O cm Cz-grown (1 0 0) Si has been examined using depth profiling with deep-level transient spectroscopy. Samples were mounted with 10 twists from the [1 1 0] direction and va