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Generation of misfit dislocations in high indium content InGaN layer grown on GaN

✍ Scribed by Hyung Koun Cho; Gye Mo Yang


Book ID
108341674
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
289 KB
Volume
243
Category
Article
ISSN
0022-0248

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## Abstract GaP LEC substrates doped with sulphur (__N__~D~ – __N__~A~ roughly (3–7) Γ— 10^17^ cm^βˆ’3^) were characterized by transmission electron microscopy. This material was found to contain microdefects such as perfect perismatic dislocation loops, and spherical precipitates. Cross‐sectional TEM