Influence of indium content and temperature on Auger-like recombination in InGaN quantum wells grown on (111) silicon substrates

✍ Scribed by Galler, B.; Drechsel, P.; Monnard, R.; Rode, P.; Stauss, P.; Froehlich, S.; Bergbauer, W.; Binder, M.; Sabathil, M.; Hahn, B.; Wagner, J.

• Book ID: 118053737
• Publisher: American Institute of Physics
• Year: 2012
• Tongue: English
• Weight: 745 KB
• Volume: 101
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.4754688