✦ LIBER ✦
226. Influence of substrate temperature and silicon content in arsenic chloride on properties of epitaxial films of gallium arsenide grown from vapour phase: N N Dyachkova et al,Neorg Mater, 8 (2), Feb 1972, 368–369 (in Russian)
- Publisher
- Elsevier Science
- Year
- 1973
- Tongue
- English
- Weight
- 161 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0042-207X
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