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Direct observation of formation of threading dislocations from stacking faults in GaN layer grown on (0 0 0 1) sapphire

✍ Scribed by F.Y. Meng; I. Han; H. McFelea; E. Lindow; R. Bertram; C. Werkhoven; C. Arena; S. Mahajan

Book ID: 113898702
Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 567 KB
Volume: 64
Category: Article
ISSN: 1359-6462
DOI: 10.1016/j.scriptamat.2010.09.012

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Direct observation of formation of threading dislocations from stacking faults in GaN layer grown on (0&#xa0;0&#xa0;0&#xa0;1) sapphire

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