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Ge volatilization products in high-k gate dielectrics

โœ Scribed by E. Golias; L. Tsetseris; A. Dimoulas; S.T. Pantelides


Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
998 KB
Volume
88
Category
Article
ISSN
0167-9317

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๐Ÿ“œ SIMILAR VOLUMES


High-k gate dielectrics
๐Ÿ“‚ Article ๐Ÿ“… 2004 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 198 KB
Performance of current mirror with high-
โœ F. Crupi; P. Magnone; A. Pugliese; G. Cappuccino ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 261 KB

This work compares the performance of the basic current mirror topology by using two different materials for gate dielectrics, the conventional SiON and an Hf-based high-k dielectrics. The impact of gate leakage and of channel length modulation on the basic current mirror operation is described. It